Power Semiconductor > IGBT (Insulated Gate Bipolar Transistor)
MR sereis IGBT low current range
- Parts
- Gate-Emitter voltageVCES [V]
- Collector currentIC [A]
- Collector-Emitter saturation voltageVCE(sat) @Tj=25deg Ctypical limit [V]
- Collector-Emitter saturation voltageVCE(sat) @Tj=25deg Cupper limit [V]
- Gate Voltage VGES [V]
- Gate-Emitter threshold voltageVGE(th)lower limit [V]
- Gate-Emitter threshold voltageVGE(th)upper limit [V]
- Die size X [mm]
- Die sizeY [mm]
- Junction temperatureTj [deg.C]
Parts | Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
---|
MR sereis IGBT middle current range
- Parts
- Gate-Emitter voltageVCES [V]
- Collector currentIC [A]
- Collector-Emitter saturation voltageVCE(sat) @Tj=25deg Ctypical limit [V]
- Collector-Emitter saturation voltageVCE(sat) @Tj=25deg Cupper limit [V]
- Gate Voltage VGES [V]
- Gate-Emitter threshold voltageVGE(th)lower limit [V]
- Gate-Emitter threshold voltageVGE(th)upper limit [V]
- Die size X [mm]
- Die sizeY [mm]
- Junction temperatureTj [deg.C]
Parts | Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
---|
MI sereis IGBT middle current range
- Parts
- Gate-Emitter voltageVCES [V]
- Collector currentIC [A]
- Collector-Emitter saturation voltageVCE(sat) @Tj=25deg Ctypical limit [V]
- Collector-Emitter saturation voltageVCE(sat) @Tj=25deg Cupper limit [V]
- Gate Voltage VGES [V]
- Gate-Emitter threshold voltageVGE(th)lower limit [V]
- Gate-Emitter threshold voltageVGE(th)upper limit [V]
- Internal gate rasistorRginttypical limit [Ω]
- Die size X [mm]
- Die sizeY [mm]
- Junction temperatureTj [deg.C]
Parts | Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Internal gate rasistor Rgint typical limit [Ω] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
---|
Power Semiconductor > FRD (Fast Recovery Diode)
MR Series FRD
Parts | Reverse voltage VRR [V] |
Forward current IF [A] |
Forward voltage VF typical limit [V] |
Forward voltage VF upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
---|
MI Series FRD
Parts | Reverse voltage VRR [V] |
Forward current IF [A] |
Forward voltage VF typical limit [V] |
Forward voltage VF upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
Specification-1 |
---|