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IGBT (Insulated Gate Bipolar Transistor)

MR sereis IGBT middle current range

Field Stop Trench gate IGBT:First Technology(Our Company)

Parts Associated Data Gate-Emitter voltage
VCES
[V]
Collector current
IC
[A]
Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
typical limit
[V]
Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
upper limit
[V]
Gate Voltage
VGES 
[V]
Gate-Emitter threshold voltage
VGE(th)
lower limit
[V]
Gate-Emitter threshold voltage
VGE(th)
upper limit
[V]
Die size
X
[mm]
Die size
Y
[mm]
Junction temperature
Tj
[deg.C]
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