Field Stop Trench gate IGBT:First Technology(Our Company)
Features
Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses
-
-
STD
-
Industrial Motor Drivers, Inverter, Welding, UPS
-
Mass production
-
scroll
Gate-Emitter voltage
VCES
[V]Collector current
IC
[A]Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
typical limit
[V]Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
upper limit
[V]Gate Voltage
VGES
[V]Gate-Emitter threshold voltage
VGE(th)
lower limit
[V]Gate-Emitter threshold voltage
VGE(th)
upper limit
[V]Die size
X
[mm]Die size
Y
[mm]Junction temperature
Tj
[deg.C]650 200 1.50 1.80 -30 to 30 5.00 6.80 10.60 10.60 -40 to 175
-
Associated Data
Model name definition PDF
Featured Products
Reasons why MinebeaMitsumi semiconductors are the choice
We provide high-performance semiconductors with an integrated system covering development, design, and manufacturing.
Engineering Information
Basic Knowledge
Download
Product Topics
Industry
Contact Us
Please click the inquiry type below according to your question. Each product / sales representative will respond to you.