Field Stop Trench gate IGBT:First Technology(Our Company)

Features

Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses

  • STD

  • Industrial Motor Drivers, Inverter, Welding, UPS

  • Mass production

  • scroll

    Gate-Emitter voltage
    VCES
    [V]

    Collector current
    IC
    [A]

    Collector-Emitter saturation voltage
    VCE(sat) @Tj=25deg C
    typical limit
    [V]

    Collector-Emitter saturation voltage
    VCE(sat) @Tj=25deg C
    upper limit
    [V]

    Gate Voltage
    VGES 
    [V]

    Gate-Emitter threshold voltage
    VGE(th)
    lower limit
    [V]

    Gate-Emitter threshold voltage
    VGE(th)
    upper limit
    [V]

    Die size
    X
    [mm]

    Die size
    Y
    [mm]

    Junction temperature
    Tj
    [deg.C]

    650 200 1.50 1.80 -30 to 30 5.00 6.80 10.60 10.60 -40 to 175

  • Associated Data

    Model name definition PDF

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