Features
Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses
Version
STD
Application
Industrial Motor Drivers, Inverter, Welding, UPS
Status
Mass production
Specifications
Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
---|---|---|---|---|---|---|---|---|---|
650 | 45 | 1.55 | 1.85 | -30 to 30 | 5.20 | 6.60 | 4.98 | 4.98 | -40 to 175 |
Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
---|---|---|---|---|---|---|
650 | 45 | 1.55 | 1.85 | -30 to 30 | 5.20 | 6.60 |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
---|---|---|
4.98 | 4.98 | -40 to 175 |