IGBT (Insulated Gate Bipolar Transistor) MR sereis IGBT low current range
MMJ6530C00xx
Features
Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses
Version
High speed
Application
Industrial Motor Drivers, Inverter, Welding, UPS
Status
Mass production
Specifications
| Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
|---|---|---|---|---|---|---|---|---|---|
| 650 | 30 | 1.80 | 2.10 | -30~30 | 4.50 | 6.50 | 3.60 | 3.60 | -40~150 |
| Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
|---|---|---|---|---|---|---|
| 650 | 30 | 1.80 | 2.10 | -30~30 | 4.50 | 6.50 |
| Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
|---|---|---|
| 3.60 | 3.60 | -40~150 |
