Features
Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses
Version
High speed
Application
Industrial Motor Drivers, Inverter, Welding, UPS
Status
Mass production
Specifications
Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Internal gate rasistor Rgint typical limit [Ω] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
---|---|---|---|---|---|---|---|---|---|---|
1200 | 50 | 1.95 | 2.30 | -30 to 30 | 5.20 | 6.60 | 4.0 | 7.18 | 6.80 | -40 to 175 |
Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
---|---|---|---|---|---|---|
1200 | 50 | 1.95 | 2.30 | -30 to 30 | 5.20 | 6.60 |
Internal gate rasistor Rgint typical limit [Ω] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
---|---|---|---|
4.0 | 7.18 | 6.80 | -40 to 175 |