Field Stop Trench gate IGBT：Second Technology（Our Company）
Features
Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses
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Low noise
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Industrial Motor Drivers, Inverter, Welding, UPS
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Mass production
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Gate-Emitter voltage
VCES
[V]Collector current
IC
[A]Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
typical limit
[V]Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
upper limit
[V]Gate Voltage
VGES
[V]Gate-Emitter threshold voltage
VGE(th)
lower limit
[V]Gate-Emitter threshold voltage
VGE(th)
upper limit
[V]Internal gate rasistor
Rgint
typical limit
[Ω]Die size
X
[mm]Die size
Y
[mm]Junction temperature
Tj
[deg.C]1200 200 1.70 2.05 -30 to 30 5.20 6.60 3.3 16.00 12.00 -40 to 175
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Associated Data
Model name definition PDF
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