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IGBT (Insulated Gate Bipolar Transistor) MI sereis IGBT middle current range

MMJC0B0J00xx

Features

Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses

Version

Low noise

Application

Industrial Motor Drivers, Inverter, Welding, UPS

Status

Mass production

Specifications

Gate-Emitter voltage
VCES
[V]
Collector current
IC
[A]
Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
typical limit
[V]
Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
upper limit
[V]
Gate Voltage
VGES 
[V]
Gate-Emitter threshold voltage
VGE(th)
lower limit
[V]
Gate-Emitter threshold voltage
VGE(th)
upper limit
[V]
Internal gate rasistor
Rgint
typical limit
[Ω]
Die size
X
[mm]
Die size
Y
[mm]
Junction temperature
Tj
[deg.C]
1200 200 1.70 2.05 -30~30 5.20 6.60 3.3 16.00 12.00 -40~175
Gate-Emitter voltage
VCES
[V]
Collector current
IC
[A]
Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
typical limit
[V]
Collector-Emitter saturation voltage
VCE(sat) @Tj=25deg C
upper limit
[V]
Gate Voltage
VGES 
[V]
Gate-Emitter threshold voltage
VGE(th)
lower limit
[V]
Gate-Emitter threshold voltage
VGE(th)
upper limit
[V]
1200 200 1.70 2.05 -30~30 5.20 6.60
Internal gate rasistor
Rgint
typical limit
[Ω]
Die size
X
[mm]
Die size
Y
[mm]
Junction temperature
Tj
[deg.C]
3.3 16.00 12.00 -40~175

Download

Associated Data

Model name definition PDF

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