IGBT (Insulated Gate Bipolar Transistor) MI sereis IGBT middle current range
MMJ75B8F00xx
Features
Field Stop Trench gate IGBT 、 Low Collector-Emitter saturation voltage 、 High short circuit capability
Low swiching losses
Version
STD
Application
General-purpose inverter, For EV
Status
Mass production
Specifications
| Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
Internal gate rasistor Rgint typical limit [Ω] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
|---|---|---|---|---|---|---|---|---|---|---|
| 750 | 275 | 1.30 | 1.60 | -20~20 | 5.10 | 6.50 | 1.7 | 10.60 | 10.60 | -40~175 |
| Gate-Emitter voltage VCES [V] |
Collector current IC [A] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C typical limit [V] |
Collector-Emitter saturation voltage VCE(sat) @Tj=25deg C upper limit [V] |
Gate Voltage VGES [V] |
Gate-Emitter threshold voltage VGE(th) lower limit [V] |
Gate-Emitter threshold voltage VGE(th) upper limit [V] |
|---|---|---|---|---|---|---|
| 750 | 275 | 1.30 | 1.60 | -20~20 | 5.10 | 6.50 |
| Internal gate rasistor Rgint typical limit [Ω] |
Die size X [mm] |
Die size Y [mm] |
Junction temperature Tj [deg.C] |
|---|---|---|---|
| 1.7 | 10.60 | 10.60 | -40~175 |
NOTE
In the case of EV, please contact our office.
